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 APT50GF120JRD
1200V 75A
E C
Fast IGBT & FRED
The Fast IGBTTM is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBTTM combined with an APT freewheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed.
E G
SO
ISOTOP (R)
2 T-
27
"UL Recognized"
* Low Forward Voltage Drop * High Freq. Switching to 20KHz * Low Tail Current * Ultra Low Leakage Current * RBSOA and SCSOA Rated * Ultrafast Soft Recovery Antiparallel Diode
MAXIMUM RATINGS (IGBT)
Symbol VCES VCGR VGE I C1 I C2 I CM1 I CM2 PD TJ,TSTG TL Parameter Collector-Emitter Voltage
C
G E
APT50GF120JRD UNIT
All Ratings: TC = 25C unless otherwise specified.
1200
RY A IN
MIN
Collector-Gate Voltage (RGE = 20K) Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 90C Pulsed Collector Current Pulsed Collector Current Total Power Dissipation
1 1
1200 20 75 50 150 100 460 -55 to 150 300
Watts C Amps Volts
@ TC = 25C @ TC = 90C
Operating and Storage Junction Temperature Range
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA) Gate Threshold Voltage (VCE = VGE, I C = 700A, Tj = 25C) TYP MAX UNIT
PR
EL I
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
M
1200 4.5 5.5 2.9 3.5 6.5 3.4 4.1 1.0
2
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 125C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V, VCE = 0V)
2
I CES I GES
TBD 100
mA nA
052-6257 Rev A
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
APT Website - http://www.advancedpower.com
Bend, Oregon 97702 -1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bat B4 Parc Cadera Nord
DYNAMIC CHARACTERISTICS (IGBT)
Symbol Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets gfe Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT50GF120JRD
Test Conditions Capacitance VGE = 0V VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCC = 0.5VCES Resistive Switching (25C) VGE = 15V I C = I C2 VCC = 0.8VCES RG = 5 I C = I C2 MIN TYP MAX UNIT
5500 650 330 525 45 310 50 160 300 190 45 110 600 150 7 8 15
7400 910 500
pF
Gate-Emitter Charge Gate-Collector ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
nC
RY
6
MIN
ns
IM
Inductive Switching (150C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 5 TJ = +150C
IN
A
ns
Turn-on Switching Energy
Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time
4
EL
4
mJ
PR
Inductive Switching (25C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 5
45 110 500 55 12.5
mJ S ns
Turn-off Delay Time Fall Time Total Switching Losses
4
TJ = +25C VCE = 20V, I C = I C2
Forward Transconductance
THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)
Symbol RJC RJA WT Characteristic Junction to Case (IGBT) Junction to Case (FRED) Junction to Ambient TYP MAX UNIT
0.24 0.66 20 1.03
oz gm C/W
Package Weight
29.2 10
lb*in N*m
Torque
1
Mounting Torque (Mounting = 8-32 or 4mm Machine and Terminals = 4mm Machine)
1.1
052-6257 Rev A Repetitive Rating: Pulse width limited by maximum junction temperature. Leakages include the FRED and IGBT. See MIL-STD-750 Method 3471 Switching losses include the FRED and IGBT.
APT Reserves the right to change, without notice, the specifications and information contained herein. 2 3 4
APT50GF120JRD
ULTRAFAST SOFT RECOVERY PARALLEL DIODE
MAXIMUM RATINGS (FRED)
Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum Average Forward Current (TC = 60C, Duty Cycle = 0.5)
All Ratings: TC = 25C unless otherwise specified.
APT50GF120JRD UNIT
1200
Volts
60 100 540
Amps
Non-Repetitive Forward Surge Current (TJ = 45C, 8.3mS)
STATIC ELECTRICAL CHARACTERISTICS (FRED)
Symbol Characteristic / Test Conditions
IN
A
RY
MIN MIN TJ = 25C TJ = 100C TJ = 25C TJ = 100C TJ = 25C TJ = 100C TJ = 25C TJ = 100C TJ = 25C TJ = 100C TJ = 25C TJ = 100C
RMS Forward Current
TYP
MAX
UNIT
IM
IF = 60A IF = 120A IF = 60A, TJ = 150C
2.5 2.0 2.0
Volts
VF
Maximum Forward Voltage
DYNAMIC CHARACTERISTICS (FRED)
Symbol trr1 trr2 trr3 tfr1 tfr2 IRRM1 IRRM2 Qrr1 Qrr2 Vfr1 Vfr2 diM/dt IF = 60A, diF /dt = -480A/s, VR =650V Characteristic TYP MAX UNIT
PR
EL
Reverse Recovery Time, IF = 1.0A, diF /dt = -15A/s, VR = 30V, TJ = 25C Reverse Recovery Time IF = 60A, diF /dt = -480A/s, VR = 650V Forward Recovery Time IF = 60A, diF /dt = 480A/s, VR = 650V Reverse Recovery Current IF = 60A, diF /dt = -480A/s, VR = 650V Recovery Charge IF = 60A, diF /dt = -480A/s, VR = 650V Forward Recovery Voltage IF = 60A, diF /dt = 480A/s, VR = 650V Rate of Fall of Recovery Current
70 70 130 170 170 18 29 630
85
ns
30
Amps
40
nC
1820 12
Volts
12
A/s
052-6257 Rev A
900 600
APT50GF120JRD
Vr
D.U.T. 30H
trr/Qrr Waveform
+15v diF /dt Adjust 0v -15v
1 2 3 4
IF - Forward Conduction Current
PR EL IM IN A RY
Figure 25, Diode Reverse Recovery Test Circuit and Waveforms
PEARSON 411 CURRENT TRANSFORMER
diF /dt - Current Slew Rate, Rate of Forward Current Change Through Zero Crossing. IRRM - Peak Reverse Recovery Current.
1
4
6
Zero
5
trr - Reverse Recovery Time Measured from Point of IF
3
Current Falling Through Zero to a Tangent Line { 6 diM/dt} Extrapolated Through Zero Defined by 0.75 and 0.50 IRRM.
0.5 IRRM
0.75 IRRM
2
5 6
Qrr - Area Under the Curve Defined by IRRM and trr.
diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr.
Qrr = 1/2 (trr . IRRM)
Figure 8, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places)
11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193)
1.95 (.077) 2.14 (.084)
* Emitter
Collector
* Source terminals are shorted internally. Current handling capability is equal for either Source terminal.
052-6257 Rev A
38.0 (1.496) 38.2 (1.504)
* Emitter Dimensions in Millimeters and (Inches)
Gate


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